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    SAMSUNG 9100 PRO SSD 4TB M.2 NVMe
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SAMSUNG 9100 PRO SSD 4TB M.2 NVMe

489,72 €
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Pristatymas į namus nuo: 3.63 €

1 - 3 darbo dienos
Samsung 9100 PRO solid state drive offers a 4 TB capacity, designed to enhance computing performance with speedy file access and storage. Operating within a temperature range of 0°C to 70°C, it ensures reliable performance under various conditions. The PCI Express 5.0 x4 (NVMe) interface, combined with Samsung's Intelligent TurboWrite 2.0 Technology, increases read and write speeds, reaching internal data rates of up to 14,800 MBps and 13,400 MBps respectively. The integrated heatsink maintains optimal operating temperatures, allowing for sustained performance even during demanding tasks. Additionally, the drive incorporates features such as TRIM support and Auto Garbage Collection Algorithm, ensuring longevity and maintaining speed over time. With a robust endurance rating of 2,400 TB, the Samsung 9100 PRO is built to handle intensive workloads while maintaining data integrity. The 256-bit AES hardware encryption provides added security for sensitive information, making this SSD a choice for professionals and gamers.
Kiekis
Turime. Pristatymas 1-2 d. d.

Mokėjimo būdai

Saugus atsiskaitymas

  • 4 TB storage capacity
  • Read speeds up to 14,800 MBps
  • Integrated heatsink for efficient temperature management
  • Security with 256-bit AES hardware encryption
  • Endurance of 2,400 TB
Samsung
MZ-VAP4T0BW

Charakteristikos

Svoris
9 g
Savybės
TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Samsung V-NAND TLC Technology, integrated heatsink, Intelligent TurboWrite 2.0 Technology, PlayStation compatible, NVMe 2.0, S.M.A.R.T.
Form Factor
M.2 2280
Talpa
4 TB
Produkto aprašymas
Samsung 9100 PRO MZ-VAP4T0 - SSD - 4 TB - PCI Express 5.0 x4 (NVMe)
Gamintojo garantija
5-year warranty
Išmatavimai (IxPxA)
22.15 mm x 80.15 mm x 2.38 mm
Sąsaja
PCI Express 5.0 x4 (NVMe)
Korpuso spalva
Black
Tipas
Solid state drive - internal
Šifravimo algoritmas
256-bit AES
Hardware Encryption
Yes
NAND Flash Memory Type
Triple-level cell (TLC)

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